منابع مشابه
Touching polymer chains by organic field-effect transistors
Organic field-effect transistors (OFETs) are used to directly "touch" the movement and dynamics of polymer chains, and then determine Tg. As a molecular-level probe, the conducting channel of OFETs exhibits several unique advantages: 1) it directly detects the motion and dynamics of polymer chain at Tg; 2) it allows the measurement of size effects in ultrathin polymer films (even down to 6 nm),...
متن کاملOrganic Field-Effect Transistors
Organic field-effect transistors (OFETs) were first described in 1987. Their characteristics have undergone spectacular improvements during the last two or three years. At the same time, several models have been developed to rationalize their operating mode. In this review, we examine the performance of OFETs as revealed by recently published data, mainly in terms of field-effect mobility and o...
متن کاملOrganic field effect transistors
This chapter aims to provide the reader with a practical knowledge about electrical methods to measure organic thin film transistor devices. It presents a series of recipes, which allow the experimentalist to gain insight into the performance and limitations of the devices and circuits being measured. It also gives guidelines on how to correctly interpret the measurements and to provide feedbac...
متن کاملOrganic Field-Effect Transistors
Over the past twenty years, research into the applications of organic semiconductors (OSCs) has intensified rapidly. Though their electron mobility is much lower than that of typical semiconductors, OSCs show promise in low-cost, flexible, lightweight, and environmentally-friendly semiconductor applications. Their hole mobility was found to be comparable to that of amorphous silicon (a-Si), wit...
متن کاملField-Effect Mobility of Organic Polymer Thin-Film Transistors
We present a method of extracting the field-effect mobility from the transfer characteristics of organic polymer thin-film transistors (OP-TFTs), in both the linear and saturation regimes, by accounting for the dependence of the mobility on the gate bias, which translates to a dependence on the accumulated density of majority charge carriers in the channel. This method is compared to the common...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Scientific Reports
سال: 2014
ISSN: 2045-2322
DOI: 10.1038/srep06387